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Product overview

Product number
D45H4
Manufacturer
Rochester Electronics
Catalog
Transistors - Bipolar (BJT) - Single
product description
PNP EPITAXIAL SILICON TRANSISTOR

Documents and media

Datasheets
D45H4

Product Details

Current - Collector (Ic) (Max) :
10 A
Current - Collector Cutoff (Max) :
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce :
35 @ 2A, 1V
Frequency - Transition :
135MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3
Part Status :
Active
Power - Max :
1.67 W
Supplier Device Package :
TO-220
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max) :
45 V

product description

PNP EPITAXIAL SILICON TRANSISTOR

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