Product overview
- Product number
- 2SB1229T
- Manufacturer
- Rochester Electronics
- product description
- PNP EPITAXIAL PLANAR SILICON
Documents and media
- Datasheets
- 2SB1229T
Product Details
- Current - Collector (Ic) (Max) :
- 2 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA, 2V
- Frequency - Transition :
- 150MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Part Status :
- Active
- Power - Max :
- 750 mW
- Supplier Device Package :
- 3-NP
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
product description
PNP EPITAXIAL PLANAR SILICON
