Product overview
- Product number
- MJD340TF
- Manufacturer
- Rochester Electronics
- product description
- NPN EPITAXIAL SILICON TRANSISTOR
Documents and media
- Datasheets
- MJD340TF
Product Details
- Current - Collector (Ic) (Max) :
- 500 mA
- Current - Collector Cutoff (Max) :
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Active
- Power - Max :
- 1.56 W
- Supplier Device Package :
- D-Pak
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 300 V
product description
NPN EPITAXIAL SILICON TRANSISTOR
Purchases and prices
Recommended Products
You may be looking for
SIT3372AC-1B3-28NG74.250000
SIT3372AC-4B3-33NZ160.000000
5SGXEA3K2F40I2LN
1033-125-S
5SGXEA4K3F40I4N
18CUC82NE
EP2AGX260EF29C4N
SIT3372AC-4B3-33NE100.000000
SIT3372AC-2E3-33NX15.360000
V708-75/2-325
US2:83DUC950F
6SL32203YH260AB0
17CUB92NF11M22
SF2138B-1
F455K000L018
SIT3372AC-4B3-25NC148.425750
SIT3372AC-4B3-30NU51.200000
5SGXEA3K2F40I2N
5SGXEA5H2F35I3
18CUC82NF
