Product overview
- Product number
- BDX33C
- Manufacturer
- Rochester Electronics
- product description
- NPN EPITAXIAL SILICON TRANSISTOR
Documents and media
- Datasheets
- BDX33C
Product Details
- Current - Collector (Ic) (Max) :
- 10 A
- Current - Collector Cutoff (Max) :
- 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A, 3V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Active
- Power - Max :
- 70 W
- Supplier Device Package :
- TO-220AB
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
product description
NPN EPITAXIAL SILICON TRANSISTOR