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Product overview

Product number
MJD31CEITU
Manufacturer
Rochester Electronics
Catalog
Transistors - Bipolar (BJT) - Single
product description
POWER BIPOLAR TRANSISTOR

Documents and media

Datasheets
MJD31CEITU

Product Details

Current - Collector (Ic) (Max) :
3 A
Current - Collector Cutoff (Max) :
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA, 1V
Frequency - Transition :
3MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Active
Power - Max :
1.56 W
Supplier Device Package :
TO-252-3 (DPAK)
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max) :
100 V

product description

POWER BIPOLAR TRANSISTOR

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