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Product overview

Product number
DXTN10060DFJBQ-7
Manufacturer
Diodes Incorporated
Catalog
Transistors - Bipolar (BJT) - Single
product description
SS LOW SAT TRANSISTOR U-DFN2020-

Documents and media

Datasheets
DXTN10060DFJBQ-7

Product Details

Current - Collector (Ic) (Max) :
4 A
Current - Collector Cutoff (Max) :
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
340 @ 200mA, 2V
Frequency - Transition :
125MHz
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
3-UDFN Exposed Pad
Part Status :
Active
Power - Max :
1.8 W
Supplier Device Package :
U-DFN2020-3 (Type B)
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
320mV @ 200mA, 4A
Voltage - Collector Emitter Breakdown (Max) :
60 V

product description

SS LOW SAT TRANSISTOR U-DFN2020-

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