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Product overview

Product number
MJ10012
Manufacturer
NTE Electronics, Inc.
Catalog
Transistors - Bipolar (BJT) - Single
product description
T-NPN SI- PO DARL SW

Documents and media

Datasheets
MJ10012

Product Details

Current - Collector (Ic) (Max) :
10 A
Current - Collector Cutoff (Max) :
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 3A, 6V
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 200°C (TJ)
Package / Case :
TO-204AA, TO-3
Part Status :
Active
Power - Max :
175 W
Supplier Device Package :
TO-3
Transistor Type :
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 2A, 10A
Voltage - Collector Emitter Breakdown (Max) :
400 V

product description

T-NPN SI- PO DARL SW

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