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Product overview

Product number
2N3019
Manufacturer
NTE Electronics, Inc.
Catalog
Transistors - Bipolar (BJT) - Single
product description
T-NPN SI- AF PREAMP DR

Documents and media

Datasheets
2N3019

Product Details

Current - Collector (Ic) (Max) :
1 A
Current - Collector Cutoff (Max) :
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA, 10V
Frequency - Transition :
100MHz
Mounting Type :
Through Hole
Operating Temperature :
175°C (TJ)
Package / Case :
TO-205AD, TO-39-3 Metal Can
Part Status :
Active
Power - Max :
800 mW
Supplier Device Package :
TO-39
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) :
80 V

product description

T-NPN SI- AF PREAMP DR

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