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Product overview

Product number
2N6667
Manufacturer
NTE Electronics, Inc.
Catalog
Transistors - Bipolar (BJT) - Single
product description
T-PNP SI-GEN PUR AMP

Documents and media

Datasheets
2N6667

Product Details

Current - Collector (Ic) (Max) :
10 A
Current - Collector Cutoff (Max) :
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A, 3V
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Part Status :
Active
Power - Max :
2 W
Supplier Device Package :
TO-220
Transistor Type :
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Voltage - Collector Emitter Breakdown (Max) :
60 V

product description

T-PNP SI-GEN PUR AMP

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