Product overview
- Product number
- BFU660F,115
- Manufacturer
- NXP Semiconductors
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF TRANS NPN 5.5V 21GHZ 4DFP
Documents and media
- Datasheets
- BFU660F,115
Product Details
- Current - Collector (Ic) (Max) :
- 60mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 10mA, 2V
- Frequency - Transition :
- 21GHz
- Gain :
- 12dB ~ 21dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-343F
- Part Status :
- Active
- Power - Max :
- 225mW
- Supplier Device Package :
- 4-DFP
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 5.5V
product description
RF TRANS NPN 5.5V 21GHZ 4DFP
