Product overview
- Product number
- MT3S20TU(TE85L)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF TRANS NPN 12V 7GHZ UFM
Documents and media
- Datasheets
- MT3S20TU(TE85L)
Product Details
- Current - Collector (Ic) (Max) :
- 80mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 5V
- Frequency - Transition :
- 7GHz
- Gain :
- 12dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.45dB @ 20mA, 5V
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 3-SMD, Flat Lead
- Part Status :
- Last Time Buy
- Power - Max :
- 900mW
- Supplier Device Package :
- UFM
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
product description
RF TRANS NPN 12V 7GHZ UFM
Purchases and prices
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