Product overview
- Product number
- HSG1002VE-TL-E
- Manufacturer
- Rochester Electronics
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF 0.035A C BAND GERMANIUM NPN
Documents and media
- Datasheets
- HSG1002VE-TL-E
Product Details
- Current - Collector (Ic) (Max) :
- 35mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 5mA, 2V
- Frequency - Transition :
- 38GHz
- Gain :
- 8dB ~ 19.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
- Operating Temperature :
- -
- Package / Case :
- 4-SMD, Gull Wing
- Part Status :
- Active
- Power - Max :
- 200mW
- Supplier Device Package :
- 4-MFPAK
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 3.5V
product description
RF 0.035A C BAND GERMANIUM NPN
Purchases and prices
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