Product overview
- Product number
- BFP640E6327
- Manufacturer
- Rochester Electronics
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF BIPOLAR TRANSISTOR
Documents and media
- Datasheets
- BFP640E6327
Product Details
- Current - Collector (Ic) (Max) :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 30mA, 3V
- Frequency - Transition :
- 40GHz
- Gain :
- 24dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SC-82A, SOT-343
- Part Status :
- Active
- Power - Max :
- 200mW
- Supplier Device Package :
- PG-SOT343-4
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 4.5V
product description
RF BIPOLAR TRANSISTOR