Product overview
- Product number
- BFR182E-6327
- Manufacturer
- Rochester Electronics
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF N-CHANNEL MOSFET
Documents and media
- Datasheets
- BFR182E-6327
Product Details
- Current - Collector (Ic) (Max) :
- 35mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA, 8V
- Frequency - Transition :
- 8GHz
- Gain :
- 9.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.3dB @ 1.8GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Power - Max :
- 250mW
- Supplier Device Package :
- SOT-23
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
product description
RF N-CHANNEL MOSFET
