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Product overview

Product number
RN46A1(TE85L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
product description
PNP + NPN BRT, Q1BSR=22KΩ, Q1BER

Documents and media

Datasheets
RN46A1(TE85L,F)

Product Details

Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition :
200MHz, 250MHz
Mounting Type :
Surface Mount
Package / Case :
SC-74, SOT-457
Part Status :
Last Time Buy
Power - Max :
300mW
Resistor - Base (R1) :
22kOhms, 10kOhms
Resistor - Emitter Base (R2) :
22kOhms, 10kOhms
Supplier Device Package :
SM6
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

product description

PNP + NPN BRT, Q1BSR=22KΩ, Q1BER

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