Product overview
- Product number
- MT3S111TU,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF SIGE NPN BIPOLAR TRANSISTOR N
Documents and media
- Datasheets
- MT3S111TU,LF
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 10GHz
- Gain :
- 12.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 3-SMD, Flat Lead
- Part Status :
- Active
- Power - Max :
- 800mW
- Supplier Device Package :
- UFM
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 6V
product description
RF SIGE NPN BIPOLAR TRANSISTOR N
