Product overview
- Product number
- MT3S111P(TE12L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- RF TRANS NPN 6V 8GHZ PW-MINI
Documents and media
- Datasheets
- MT3S111P(TE12L,F)
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 8GHz
- Gain :
- 10.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.25dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Part Status :
- Active
- Power - Max :
- 1W
- Supplier Device Package :
- PW-MINI
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 6V
product description
RF TRANS NPN 6V 8GHZ PW-MINI
