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Product overview

Product number
NE85633-T1B-A
Manufacturer
CEL (California Eastern Laboratories)
Catalog
Transistors - Bipolar (BJT) - RF
product description
SAME AS 2SC3356 NPN SILICON AMPL

Documents and media

Datasheets
NE85633-T1B-A

Product Details

Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 20mA, 10V
Frequency - Transition :
7GHz
Gain :
11.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.1dB @ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Part Status :
Last Time Buy
Power - Max :
200mW
Supplier Device Package :
3-MINIMOLD
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
12V

product description

SAME AS 2SC3356 NPN SILICON AMPL

Purchases and prices

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