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Product overview

Product number
NESG270034-T1-AZ
Manufacturer
CEL (California Eastern Laboratories)
Catalog
Transistors - Bipolar (BJT) - RF
product description
NPN SILICON MEDIUM POWER TRANSIS

Documents and media

Datasheets
NESG270034-T1-AZ

Product Details

Current - Collector (Ic) (Max) :
750mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 100mA, 3V
Frequency - Transition :
-
Gain :
19.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
-
Operating Temperature :
150°C (TJ)
Package / Case :
TO-243AA
Part Status :
Last Time Buy
Power - Max :
1.9W
Supplier Device Package :
SOT-89
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
9.2V

product description

NPN SILICON MEDIUM POWER TRANSIS

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