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Product overview

Product number
NE85619-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Catalog
Transistors - Bipolar (BJT) - RF
product description
SAME AS 2SC5006 NPN SILICON AMPL

Documents and media

Datasheets
NE85619-T1-A

Product Details

Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 7mA, 3V
Frequency - Transition :
4.5GHz
Gain :
9dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.2dB @ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
SOT-523
Part Status :
Last Time Buy
Power - Max :
125mW
Supplier Device Package :
SOT-523
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
12V

product description

SAME AS 2SC5006 NPN SILICON AMPL

Purchases and prices

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