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Product overview

Product number
HN1B04FU-GR,LXHF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Arrays
product description
AUTO AEC-Q PNP + NPN TR VCEO:-50

Documents and media

Datasheets
HN1B04FU-GR,LXHF

Product Details

Current - Collector (Ic) (Max) :
150mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Frequency - Transition :
150MHz, 120MHz
Mounting Type :
Surface Mount
Operating Temperature :
-
Package / Case :
6-TSSOP, SC-88, SOT-363
Part Status :
Active
Power - Max :
200mW
Supplier Device Package :
US6
Transistor Type :
NPN, PNP
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
50V

product description

AUTO AEC-Q PNP + NPN TR VCEO:-50

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