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Product overview

Product number
NTE2018
Manufacturer
NTE Electronics, Inc.
Catalog
Transistors - Bipolar (BJT) - Arrays
product description
IC-8 CHAN CMOS/TTL DR 18-PIN DIP

Documents and media

Datasheets
NTE2018

Product Details

Current - Collector (Ic) (Max) :
600mA
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
-20°C ~ 85°C (TA)
Part Status :
Active
Power - Max :
1W
Supplier Device Package :
18-PDIP
Transistor Type :
8 NPN Darlington
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 350mA, 500A
Voltage - Collector Emitter Breakdown (Max) :
50V

product description

IC-8 CHAN CMOS/TTL DR 18-PIN DIP

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