Product overview
- Product number
- RN1962FE(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- TRANS 2NPN PREBIAS 0.1W ES6
Documents and media
- Datasheets
- RN1962FE(TE85L,F)
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Obsolete
- Power - Max :
- 100mW
- Resistor - Base (R1) :
- 10kOhms
- Resistor - Emitter Base (R2) :
- 10kOhms
- Supplier Device Package :
- ES6
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
product description
TRANS 2NPN PREBIAS 0.1W ES6
Purchases and prices
Recommended Products
You may be looking for
D38999/26FE26HB
KJB6T15F35PA
SXT2148EC38-40.000MT
TSW-106-27-T-S-RE
TSW-107-08-L-D-RA-012
KPSE02E20-41SY
SXT11410FE17-38.400MT
SXT22410EE48-27.120MT
TSW-105-30-S-S-RA
LJT00RT23-35PC-014
FLCDSCBUYG
180-131M06-11-4N
MF10BSWPSH11-NC-LM(01)
SXT1148BB27-38.400MT
5604801
TSW-105-21-F-Q
D38999/26WC4HC
CA3108E18-9SF137
SXT1148CB16-38.400MT
TSW-106-28-F-D