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Product overview

Product number
HN1C03FU-B,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Arrays
product description
NPN + NPN IND. TRANSISTOR VCEO20

Documents and media

Datasheets
HN1C03FU-B,LF

Product Details

Current - Collector (Ic) (Max) :
300mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
350 @ 4mA, 2V
Frequency - Transition :
30MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
6-TSSOP, SC-88, SOT-363
Part Status :
Active
Power - Max :
200mW
Supplier Device Package :
US6
Transistor Type :
2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic :
100mV @ 3mA, 30A
Voltage - Collector Emitter Breakdown (Max) :
20V

product description

NPN + NPN IND. TRANSISTOR VCEO20

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