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Product overview

Product number
HN4B01JE(TE85L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Arrays
product description
TRANS NPN/PNP 50V 0.15A ESV PLN

Documents and media

Datasheets
HN4B01JE(TE85L,F)

Product Details

Current - Collector (Ic) (Max) :
150mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 10MA, 100MA
Frequency - Transition :
80MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SOT-553
Part Status :
Active
Power - Max :
100mW
Supplier Device Package :
ESV
Transistor Type :
NPN, PNP (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
50V

product description

TRANS NPN/PNP 50V 0.15A ESV PLN

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