Product overview
- Product number
- IDC08S60CEX1SA3
- Manufacturer
- Infineon Technologies
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE SIC 600V 8A SAWN WAFER
Documents and media
- Datasheets
- IDC08S60CEX1SA3
Product Details
- Capacitance @ Vr, F :
- 310pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 8A (DC)
- Current - Reverse Leakage @ Vr :
- 100 µA @ 600 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- Die
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 8 A
product description
DIODE SIC 600V 8A SAWN WAFER
