Product overview
- Product number
- IDB30E60ATMA1
- Manufacturer
- Infineon Technologies
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE GEN PURP 600V 52.3A TO263
Documents and media
- Datasheets
- IDB30E60ATMA1
Product Details
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 52.3A (DC)
- Current - Reverse Leakage @ Vr :
- 50 µA @ 600 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -40°C ~ 175°C
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Last Time Buy
- Reverse Recovery Time (trr) :
- 126 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- PG-TO263-3-2
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 2 V @ 30 A
product description
DIODE GEN PURP 600V 52.3A TO263
