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Product overview

Product number
WNSC051200Q
Manufacturer
WeEn Semiconductors Co., Ltd
Catalog
Diodes - Rectifiers - Single
product description
SILICON CARBIDE POWER DIODE

Documents and media

Datasheets
WNSC051200Q

Product Details

Capacitance @ Vr, F :
250pF @ 1V, 1MHz
Current - Average Rectified (Io) :
5A
Current - Reverse Leakage @ Vr :
50 µA @ 1200 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C (Max)
Package / Case :
TO-220-2
Part Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-220AC
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
1.6 V @ 5 A

product description

SILICON CARBIDE POWER DIODE

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