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Product overview

Product number
MSRT200100(A)D
Manufacturer
GeneSiC Semiconductor
Catalog
Diodes - Rectifiers - Arrays
product description
DIODE GEN 1KV 200A 3 TOWER

Documents and media

Datasheets
MSRT200100(A)D

Product Details

Current - Average Rectified (Io) (per Diode) :
200A
Current - Reverse Leakage @ Vr :
10 µA @ 1000 V
Diode Configuration :
1 Pair Series Connection
Diode Type :
Standard
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
Three Tower
Part Status :
Active
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
Three Tower
Voltage - DC Reverse (Vr) (Max) :
1000 V
Voltage - Forward (Vf) (Max) @ If :
1.1 V @ 200 A

product description

DIODE GEN 1KV 200A 3 TOWER

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