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Product overview

Product number
CY10E422-7DC
Manufacturer
Rochester Electronics
Catalog
Memory
product description
STANDARD SRAM, 256X4, 7NS10K

Documents and media

Datasheets
CY10E422-7DC

Product Details

Access Time :
7 ns
Clock Frequency :
-
Memory Format :
SRAM
Memory Interface :
Parallel
Memory Size :
1Kb (256 x 4)
Memory Type :
Volatile
Mounting Type :
Through Hole
Operating Temperature :
0°C ~ 70°C (TA)
Part Status :
Active
Supplier Device Package :
24-SBDIP
Technology :
SRAM - Asynchronous
Voltage - Supply :
4.94V ~ 5.46V
Write Cycle Time - Word, Page :
7ns

product description

STANDARD SRAM, 256X4, 7NS10K

Purchases and prices

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