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Product overview

Product number
CDP1821CD3R1783
Manufacturer
Rochester Electronics
Catalog
Memory
product description
HIGH-RELIABILITY CMOS 1024-WORD

Documents and media

Datasheets
CDP1821CD3R1783

Product Details

Access Time :
255 ns
Clock Frequency :
-
Memory Format :
SRAM
Memory Interface :
Parallel
Memory Size :
1Kb (1K x 1)
Memory Type :
Volatile
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 125°C (TA)
Part Status :
Active
Supplier Device Package :
16-SBDIP
Technology :
SRAM - Asynchronous
Voltage - Supply :
4V ~ 6.5V
Write Cycle Time - Word, Page :
420ns

product description

HIGH-RELIABILITY CMOS 1024-WORD

Purchases and prices

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