- Manufacturer：
-
- Operating Temperature：
-
- Package / Case：
-
- Power - Max：
-
- Supplier Device Package：
-
- FET Feature：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
17 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Rochester Electronics | HEXFET POWER MOS... |
471 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 13A... |
4,000 |
3,000
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET 2N-CH 30V 9.7... |
577 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 8A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 8A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 9.7... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 9.1... |
1 |
7,735
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 11A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | IRF8313 - HEXFET PO... |
1,359 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 9.1... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 15A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 25V 7.8... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 13A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 15A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 15A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 15A... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 11A... |
1 |
3,000
In-stock
|
Get Quote |
