- Manufacturer：
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- Power - Max：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Gate Charge (Qg) (Max) @ Vgs：
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4 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Rochester Electronics | HEXFET POWER MOS... |
471 |
3,000
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | MOSFET 2N-CH 30V 9.7... |
577 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 9.7... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | IRF8313 - HEXFET PO... |
1,359 |
3,000
In-stock
|
Get Quote |
