- Manufacturer:
-
- onsemi (6)
- Package / Case:
-
- Supplier Device Package:
-
- FET Type:
-
- FET Feature:
-
- Current - Continuous Drain (Id) @ 25°C:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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13 Records
Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
---|---|---|---|---|---|---|---|
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onsemi | MOSFET 2N-CH EFCP |
1 |
425
In-stock
|
Get Quote | ||
![]() |
Renesas Electronics Corporation | MOSFET 2N-CH 24V |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2 N-CHANNE... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2 N-CHANNE... |
5,000 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2N-CH 6EFCP |
2,142 |
1,333,000
In-stock
|
Get Quote | ||
![]() |
Renesas Electronics Corporation | MOSFET 2N-CH 12V |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
ROHM Semiconductor | MOSFET N/P-CH 100V ... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 40V 4.7... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2N-CH EFCP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 4CHIP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 4CHIP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 4CHIP... |
1 |
3,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2N-CH EFCP... |
1,924 |
923,171
In-stock
|
Get Quote |