- Part Status：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- FET Type：
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- FET Feature：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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12 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Vishay | MOSFET 2P-CH 60V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2P-CH 20V 3.2... |
1 |
2,215
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | SMALL SIGNAL P-CH... |
1,031 |
18,650
In-stock
|
Get Quote | ||
|
|
Rochester Electronics | N-CHANNEL POWER M... |
1,031 |
14,985
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2P-CH 20V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 20V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2P-CH 20V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET 2N-CH 100V 3.... |
593 |
3,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET 2P-CH 60V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET 2N-CH 20V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2P-CH 20V 3.2... |
1 |
3,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2P-CH 30V 3.2... |
1 |
3,000
In-stock
|
Get Quote |
