- Manufacturer：
-
- EPC (1)
- Package / Case：
-
- Supplier Device Package：
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- FET Type：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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6 Records
| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
ROHM Semiconductor | MOSFET 2N-CH 1200V 1... |
1 |
7
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | SILICON CARBIDE ... |
1 |
2
In-stock
|
Get Quote | ||
|
|
EPC | GANFET 2NCH 120V 3.4... |
1 |
20,635
In-stock
|
Get Quote | ||
|
|
ROHM Semiconductor | MOSFET 2N-CH 1200V 1... |
1 |
26
In-stock
|
Get Quote | ||
|
|
Microchip Technology | MOSFET 4N-CH 600V 39... |
12 |
3,000
In-stock
|
Get Quote | ||
|
|
Microchip Technology | MOSFET 2N-CH 600V 95... |
9 |
3,000
In-stock
|
Get Quote |
