Transistors - Bipolar (BJT) - Single, Pre-Biased

Part Status：

Vce Saturation (Max) @ Ib, Ic：

DC Current Gain (hFE) (Min) @ Ic, Vce：

Frequency - Transition：

Resistor - Emitter Base (R2)：

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4 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN1105MFV,L3F(CT	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	21,295 In-stock	Get Quote
RN1105MFV,L3F	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	3,000 In-stock	Get Quote
RN1105MFV,L3XHF(CT	Toshiba Electronic Devices and Storage Corporation	AUTO AEC-Q NPN Q1B...	1	PDF RFQ	3,000 In-stock	Get Quote
RN1115MFV,L3F	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	8,000	PDF RFQ	3,000 In-stock	Get Quote

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