Product overview
- Product number
- NE85633-T1B-R25-A
- Manufacturer
- CEL (California Eastern Laboratories)
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- SAME AS 2SC3356 NPN SILICON AMPL
Documents and media
- Datasheets
- NE85633-T1B-R25-A
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 20mA, 10V
- Frequency - Transition :
- 7GHz
- Gain :
- 11.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Last Time Buy
- Power - Max :
- 200mW
- Supplier Device Package :
- 3-MINIMOLD
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
product description
SAME AS 2SC3356 NPN SILICON AMPL
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